Solid-state imaging apparatus

ABSTRACT

The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.

TECHNICAL FIELD

The present invention relates to a solid-state imaging apparatusincluding a first substrate having a plurality of photoelectricconversion units and a second substrate laminated to the first substrateand having a plurality of readout circuits to process or read signalsgenerated by each of the photoelectric conversion units.

BACKGROUND ART

Solid-state imaging apparatuses are known to have a structure in whichphotoelectric conversion units are arranged on a substrate andperipheral circuits and part of pixel circuits are arranged on anothersubstrate, and these substrates are electrically connected to eachother.

Japanese Patent Application Laid-Open No. 2006-191081 discusses abackside illumination type solid-state image sensor in whichphotoelectric conversion units on a first substrate are connected toperipheral circuits on a second substrate through bonding pads providedon the front surfaces of the respective substrates in order to improvethe sensitivity of the photoelectric conversion units.

Japanese Patent Application Laid-Open No. 2008-235478 discusses an imagesensor including a first substrate having photodetection pixels andthrough wiring and a second substrate having readout circuits. Thereadout circuit reads an electrical signal via the through wiring andoutput the signal as an image signal. In this solid-state image sensor,a rear surface of the first substrate faces the readout circuits on thesecond substrate and the through wiring is electrically connected to thereadout circuits at their terminals.

CITATION LIST Patent Literature

-   PTL 1: Japanese Patent Application Laid-Open No. 2006-191081-   PTL 2: Japanese Patent Application Laid-Open No. 2008-235478

SUMMARY OF INVENTION Technical Problem

In a structure in which photoelectric conversion units are arranged on asubstrate, a part of pixel circuits and peripheral circuits are arrangedon another substrate, and these substrates are electrically connected toeach other, higher accuracy in alignment is required in accordance withthe miniaturization of pixels and elements constituting the circuits.For example, the miniaturization makes it difficult to ensure electricalconnections at a large number of electrical connection nodes of everypixel. In addition, as discussed in Japanese Patent ApplicationLaid-Open No. 2008-235478, using a micro-bump structure on connectionportions hinders the miniaturization.

The present invention relates to a solid-state imaging apparatus capableof providing reliable electrical connections between miniaturizedelements arranged therein.

Solution to Problem

According to an aspect of the present invention, a solid-state imagingapparatus includes a first substrate on which a plurality ofphotoelectric conversion units is arranged and a second substrate onwhich a plurality of readout circuits to process or read a signalgenerated by each of the photoelectric conversion units is arranged. Thesolid-state imaging apparatus includes a plurality of first conductivepatterns which are arranged on the first substrate and electricallyseparated from one another, and a plurality of second conductivepatterns which are arranged on the second substrate and electricallyseparated from one another, wherein each of the plurality of firstconductive patterns has a first electrical connection portion to be incontact with the second conductive patterns, and each of the pluralityof second conductive patterns has a second electrical connection portionto be in contact with the first conductive patterns, wherein the firstconductive pattern includes a first partial pattern that includes thefirst electrical connection portion and extends in a first direction,and the second conductive pattern includes a second partial pattern thatincludes the second electrical connection portion and extends in asecond direction different from the first direction, and wherein thefirst partial pattern has a length extending in the first directionlonger than a length thereof in the second direction.

Advantageous Effects of Invention

According to the present invention, in a solid-state imaging apparatusincluding a plurality of substrates which are separately formed andelectrically connected to one another, the electrical connection betweenthe substrates can be provided without fail.

Further features and aspects of the present invention will becomeapparent from the following detailed description of exemplaryembodiments with reference to the attached drawings.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate exemplary embodiments, features,and aspects of the invention and, together with the description, serveto explain the principles of the invention.

FIG. 1 is a schematic cross sectional view illustrating a solid-stateimaging apparatus according to a first exemplary embodiment.

FIG. 2 is a schematic top view illustrating the solid-state imagingapparatus according to the first exemplary embodiment.

FIG. 3 is a schematic top view illustrating a solid-state imagingapparatus according to a second exemplary embodiment.

FIG. 4 is a schematic top view illustrating a modified solid-stateimaging apparatus.

FIG. 5 is a schematic top view illustrating a solid-state imagingapparatus according to a third exemplary embodiment.

FIG. 6A illustrates an example of a pixel equivalent circuit applicableto the present invention.

FIG. 6B illustrates an example of a pixel equivalent circuit applicableto the present invention.

FIG. 7 is a cross sectional view illustrating an example of asolid-state imaging apparatus applicable to the present invention.

FIG. 8 illustrates the relationship between conductive patterns andpixel pitches of the solid-state imaging apparatus according to thefirst exemplary embodiment.

FIG. 9A illustrates the relationship between conductive patterns andpixel pitches of the solid-state imaging apparatus according to thefirst exemplary embodiment.

FIG. 9B illustrates the relationship between conductive patterns andpixel pitches of the solid-state imaging apparatus according to thefirst exemplary embodiment.

DESCRIPTION OF EMBODIMENTS

Various exemplary embodiments, features, and aspects of the inventionwill be described in detail below with reference to the drawings.

FIG. 1 is a schematic cross sectional view illustrating an electricalconnection between first and second substrates of a solid-state imagingapparatus according to a first exemplary embodiment. The substrateaccording to the first exemplary embodiment includes semiconductorportions based on silicon, but the portions may be based on gallium orarsenic, and the substrates may be silicon-on-insulator (SOI)substrates.

Further, the substrate includes a portion based on semiconductormaterial, an insulating layer adjoining the portion based onsemiconductor material, a wiring layer, and a portion including anoptical member. The portion based on semiconductor material may bereferred to as semiconductor substrate. FIG. 1 illustrates a crosssection of one pixel, but actually, the substrates are provided with alarge number of pixels, and may further include a column amplificationunit, a vertical scan unit, and a horizontal scan unit.

An interface 101 a exists between silicon of a first substrate and aninterlayer insulating film disposed on the silicon. An interface 101 bexists between silicon of a second substrate and an interlayerinsulating film disposed on the silicon. A plurality of photoelectricconversion units is disposed on the first substrate, and a plurality ofreadout circuits to process or read signals generated by each of thephotoelectric conversion units is disposed on the second substrate. Thereadout circuits include a part of pixel circuits and peripheralcircuits provided for every pixel array.

The pixel circuits may include a floating diffusion (hereinafter,referred to as FD), a transfer unit configured to transfer signals fromthe photoelectric conversion units to the FD, a pixel amplification unitelectrically connected to the FD at a gate thereof, and a pixel resetunit configured to reset an electric potential inside an input node ofthe pixel amplification unit. The peripheral circuits may include signalprocessing units such as column amplification units and column analog todigital (AD) conversion units that are provided for every pixel array.The peripheral circuits may further include vertical scanning circuitsand horizontal scanning circuits.

The entire above-described components of the readout circuits may bearranged on the second substrate, or a part of the components may bearranged on the second substrate. It is desirable that, as illustratedin FIG. 1, the transfer unit and the FD can be arranged on the firstsubstrate, and the other components including the pixel amplificationunit and the pixel reset unit can be arranged on the second substrate.

The solid-state imaging apparatus includes a photoelectric conversionunit 102, an FD 103, and a contact plug 104 electrically connected tothe FD. The contact plug 104 can be formed by filling a contact hole inthe interlayer insulating film with a conductive element such astungsten.

The solid-state imaging apparatus further includes a first conductivepattern 105 disposed on the first substrate. The first conductivepattern 105 is electrically connected to the contact plug 104. The firstsubstrate is provided with a plurality of the first conductive patterns105. The first conductive patterns 105 are electrically separated fromone another.

The solid-state imaging apparatus further includes a second conductivepattern 106 disposed on the second substrate. The second substrate isprovided with a plurality of the second conductive patterns 106. Thesecond conductive patterns 106 are electrically separated from oneanother.

Each of the second conductive patterns 106 is electrically connected toa gate of the pixel amplification unit and a source of the pixel resetunit on the second substrate, via a plug and a wiring for example.

In FIG. 1, a first direction axis 107 indicates a first direction, and asecond direction axis 108 indicates a second direction different fromthe first direction. The first direction can perpendicularly intersectwith the second direction.

Each of the first conductive patterns 105 has a first electricalconnection portion to be brought in contact with the second conductivepatterns 106. Each of the second conductive patterns 106 has a secondelectrical connection portion to be brought in contact with the firstconductive patterns 105.

FIG. 2 is a schematic top view illustrating the first and secondelectrical connection portions between the first and second substratesin the solid-state imaging apparatus according to the first exemplaryembodiment. The parts having functions similar to those in FIG. 1 arereferred to the same reference numerals, and are not described.

The first conductive pattern 105 is connected to the second conductivepattern at an electrical connection portion 201. The electricalconnection portion 201 is formed at the contact between a firstelectrical connection portion of the first conductive pattern 105 and asecond electrical connection portion of the second conductive pattern106.

The first conductive pattern 105 is connected to a conductive element atan electrical connection portion 202. The conductive elementelectrically connects the first conductive pattern 105 to the FD 103.The second conductive pattern 106 is connected to a conductive elementat an electrical connection portion 203. The conductive elementelectrically connects the second conductive pattern 106 to the gate ofthe pixel amplification unit and to the source of the pixel reset unit.It is desirable that the electrical connection portions 202 and 203 arelocated at two-dimensionally different positions from the electricalconnection portion 201.

The first conductive pattern 105 extends in the first direction, and thesecond conductive pattern 106 extends in the second direction. When thefirst electrical connection portion of the first conductive pattern 105contacts the second electrical connection portion of the secondconductive pattern 106, the first conductive pattern 105 is electricallyconnected to the second conductive pattern 106.

The first conductive pattern 105 has a length b1 along the firstdirection, and a length b2 along the second direction. The secondconductive pattern 106 has a length a1 along the first direction, and alength a2 along the second direction. The length b1 is longer than thelength b2, and the length a2 is longer than the length a1.

It is desirable that the lengths a1 and b1 of the first and secondconductive patterns respectively can be shorter than a pixel pitch.Further, it is desirable that, in a configuration where the pixelamplification unit is shared by a plurality of photoelectric conversionunits, an upper limit of the length a1 or the length b1 can be shorterthan the total pixel pitch of the number of pixels of the photoelectricconversion units which share the pixel amplification unit. The term“pixel pitch” herein is defined as a pixel pitch on the first substrate.More specifically, a pixel pitch can be defined as a length between thecenters of adjacent photoelectric conversion units.

FIG. 8 illustrates an example of the positional relationship between apixel pitch and a conductive pattern on the first substrate. Thisexample illustrates an arrangement with a photoelectric conversion unit,an FD, and a transfer unit on the first substrate.

The first substrate includes a photoelectric conversion unit 801, a FD802, a transfer gate 803 configuring a part of the transfer unit, afirst conductive pattern 804, and an element separation area 805 fordetermining an active area in a semiconductor area. A pixel pitch p1extends in the vertical direction, and a pixel pitch p2 extends in thehorizontal direction. In this example, the first conductive pattern 804has a length a1 extending in the horizontal direction. The length a1 isshorter than the pixel pitches p1 and p2. In the case where the pixelpitches are different in adjacent directions as in this example, thelength a1 can be set to be shorter than at least a longer pixel pitch ofthe different pitches.

The first conductive pattern 804 is arranged to overlap with a part ofthe photo-electric conversion unit 801. In other words, the firstconductive pattern 804 is arranged to extend to a part of a region thatcorresponds to a vertical projection of the photoelectric conversionunit in the direction to the second substrate. This structureadvantageously enables light transmitted through the photoelectricconversion unit to be returned to the photoelectric conversion unit byreflection.

FIGS. 9A and 9B are top views each illustrating an example of the firstsubstrate on which a plurality of photoelectric conversion units sharesthe pixel amplification unit. The parts similar to those in FIG. 8 arereferred to the same reference numerals, and detail description thereofare omitted. FIGS. 9A and 9B illustrate structures of first and secondexamples respectively, both of which are included within the scope ofthe present exemplary embodiment.

In FIG. 9A, the first substrate includes a first conductive pattern 901.The first conductive pattern 901 has a length a1 extending in thevertical direction, and is formed by a top wiring layer. The firstconductive pattern 901 contacts the second conductive pattern on thesecond substrate to form an electrical connection portion. The firstconductive pattern 901 extends across a borderline 902 between pixels.This arrangement can increase the length of the first conductive patternparallel to the first direction, and ensures electrical connectionbetween the first and second conductive patterns.

It is desirable that the first conductive pattern 901 has a length a1 inthe vertical direction, and the length a1 can be longer than the pixelpitch p1 and shorter than twice that of the pixel pitch p1. In aconfiguration where the pixel amplification unit is shared by aplurality of photoelectric conversion units, the lengths a1 can be lessthan the total pitch of the number of pixels of the photoelectricconversion units in the array direction which share the pixelamplification unit. For example, when the pixel amplification unit isshared by four photoelectric conversion units, the lengths a1 can belonger than three times that of the pixel pitch and less than four timesthat of the pixel pitch. This can be generalized into a condition of Lis larger than or equal to ((n−1)*p) and is smaller than or equal to(n*p), where L is an extending length of a conductive pattern, n is thenumber of pixels sharing the pixel amplification unit, and p is thepixel pitch.

In FIG. 9B, a conductive pattern 902 is formed by a top wiring layer.The conductive pattern 902 contacts the second conductive pattern andforms an electrical connection portion. The conductive pattern 902 has alength a2 in the vertical direction that is shorter than the pixel pitchp1. A conductive pattern 903 is formed by a wiring layer lower than theconductive pattern 902. The conductive patterns 902 and 903 areelectrically connected to each other via a plug.

In the second example in FIG. 9B, the conductive pattern that actuallycontacts the second conductive pattern, that is the conductive pattern902, has an extending length shorter than that in the structure in FIG.9A. The present invention can be implemented in the structure in FIG.9B, but the electrical connection can be ensured in the structure inFIG. 9A more reliably than in the structure in FIG. 9B.

FIGS. 8, 9A, and 9B are used to describe the first conductive pattern,but the description can be applied to the second conductive pattern. Inthis case, the relationship between a pixel pitch and the secondconductive pattern on the first substrate can be defined as a conditionsimilar to the above-described one. If a plurality of pixels shares thepixel amplification unit as in the example of the first conductivepattern, the second conductive pattern can be arranged to extend acrossborderlines between the pixels.

As in the present exemplary embodiment, the first conductive patterncontacts with the second conductive pattern at the intersecting portionthereof to be electrically connected to one another, so that electricalconnection between the first and second substrates can be ensured whilesuppressing increase in capacitance of the FD (FD capacitance).

More specifically, a comparative example is given, in which the firstand second conductive patterns each have a square shape of 0.2micrometer*0.2 micrometer. In other words, a1=a2=b1=b2 is satisfied. Inthis comparative example, it is assumed that good electrical connectioncan be provided when a connection portion has an area of 0.01 squaremicrometers or more, in order to obtain a resistance within a desiredrange. In the comparative example, misalignment ranging more than 0.1micrometer reduces the area of the connection portion to less than 0.01square micrometers, which provides poor electrical connection due to aresistance beyond the desired range.

In contrast, when the first and second substrates have dimensions ofa1=b1=0.4 micrometer and a2=b2=0.1 micrometer, and a connection portionhaving an area of 0.01 square micrometers or more, it is assumed toprovide the good electrical connection. In this case, misalignment ofwithin 0.15 micrometer is allowable, and accordingly the allowable rangefor the misalignment will be 1.5 times that in the comparative example.

In addition, the first and second conductive patterns having a shape ofa large aspect ratio such as that of the present exemplary embodimentare advantageous in a manufacturing process. More specifically, such ashape provides a significant advantage when the conductive patterns forelectrical connection are manufactured with copper for wiring materialusing a damascene method (damascene structure). If the first conductivepattern has a square shape of a larger area for good electricalconnection as in the comparative example, defects such as dishing arelikely to occur in a chemical mechanical polishing (CMP) process forformation of the damascene structure. In contrast, when at least one ofthe first and second conductive patterns has a shape of a large aspectratio which extends in a certain direction, the probability ofoccurrence of dishing in CMP process can be decreased as compared withthat in the comparative example.

FIG. 3 is a top view illustrating an electrical connection portionaccording to a second exemplary embodiment. The present exemplaryembodiment differs from the first exemplary embodiment in that one firstconductive pattern is connected to one second conductive pattern at aplurality of electrical connection portions.

The first conductive pattern includes partial patterns 301 a to 301 e.The first conductive pattern includes a plurality of partial patterns,whereas the conductive pattern according to the first exemplaryembodiment can be said to include a single partial pattern. The partialpatterns 301 a to 301 d intersect with a second conductive pattern 302respectively at electrical connection portions 303 a to 303 d. The firstconductive pattern includes an electrical connection portion 304 tointersect with a conductive element that electrically connects thepartial pattern 301 a to the FD.

The second conductive pattern 302 includes an electrical connectionportion 305 to intersect with a conductive element that electricallyconnects the second conductive pattern 302 to a gate of the pixelamplification unit and a source of the pixel rest unit. A direction axis306 indicates a first direction, and a direction axis 307 indicates asecond direction.

The partial patterns 301 a to 301 d each have a length a1 parallel tothe first direction and a length a2 parallel to the second direction.The length a1 is longer than the length a2. The partial pattern 301 ehas a length a3 parallel to the first direction and a length a4 parallelto the second direction. The partial pattern 301 e is provided toelectrically connect the partial patterns 301 a to 301 d one another.The partial pattern 301 e has no electrical connection portion to beconnected to the second conductive pattern 302. In the present exemplaryembodiment, the partial patterns 301 a to 301 d extend more in the firstdirection than in the second direction. In other words, a single firstconductive pattern is provided with a plurality of parts extending morein the first direction than in the second direction.

The second conductive pattern 302 has a length b1 parallel to the firstdirection and a length b2 parallel to the second direction. The lengthb2 is longer than the length b1.

In the present exemplary embodiment, the first conductive patternincludes the plurality of partial patterns extending in the firstdirection, thus a plurality of electrical connection portions isprovided between the first conductive pattern and the second conductivepattern. As compared with the first exemplary embodiment, the structureaccording to the present exemplary embodiment can provide more securedelectrical connection between the patterns. The actual number of theelectrical connection portions is not limited to that in the aboveexample, and any plural number of electrical connection portionsprovides the same effect as that of the present exemplary embodiment. InFIG. 3, the partial patterns 301 a to 301 e are formed on the samewiring layer, but for example, the partial pattern 301 e may be formedon a wiring layer different from those of the partial patterns 301 a to301 d and electrically connected to the partial patterns 301 a to 301 dthrough a via plug. In this case, the first conductive pattern is formedby a plurality of wiring layers.

FIG. 4 is a top view illustrating electrical connection portions of amodification of the second exemplary embodiment. The modificationdiffers from the second exemplary embodiment in that the first andsecond conductive patterns each have partial patterns extending both inthe first and second directions.

The first conductive pattern includes partial patterns 401 a and 401 b.The partial pattern 401 a has a length a1 parallel to the firstdirection and a length a2 parallel to the second direction. The lengtha1 is longer than the length a2. Accordingly, the partial pattern 401 aextends more in the first direction than in the second direction.

The second conductive pattern includes partial patterns 402 a and 402 b.The partial pattern 402 b has a length b2 parallel to the firstdirection and a length b1 parallel to the second direction. The lengthb1 is longer than the length b2. Accordingly, the partial pattern 402 bextends more in the second direction different from the first direction.The partial pattern 401 b has a shape similar to that of the partialpattern 402 b, and the partial pattern 402 a has a shape similar to thatof the partial pattern 401 a.

Accordingly, the first conductive pattern includes the partial pattern(conductive pattern 401 a) extending more in the first direction and thepartial pattern (conductive pattern 401 b) extending more in the seconddirection. The second conductive pattern includes the partial pattern(conductive pattern 402 a) extending more in the first direction and thepartial pattern (conductive pattern 402 b) extending more in the seconddirection.

The first conductive pattern is electrically connected to the secondconductive pattern at electrical connection portions 403 a and 403 b.More specifically, the electrical connection portion 403 a isintersection between the partial pattern 401 b extending more in thesecond direction and the partial pattern 402 a extending more in thefirst direction. Further, the electrical connection portion 403 b isintersection between the partial pattern 401 a extending more in thefirst direction and the partial pattern 402 b extending more in thesecond direction.

The partial pattern 401 a includes an electrical connection portion 404to intersect with a conductive element that electrically connects thepartial pattern 401 a with the FD. The partial pattern 402 b has anelectrical connection portion 405 to intersect with a conductive elementthat electrically connects the partial pattern 402 b to a gate of thepixel amplification unit and a source of the pixel rest unit.

The present exemplary embodiment can also provide the effect similar tothat in the second exemplary embodiment.

FIG. 5 is a top view illustrating an electrical connection according toa third exemplary embodiment. The present exemplary embodiment differsfrom the first and second exemplary embodiments in the shape of a secondconductive pattern. More specifically, the second conductive pattern ofthe present exemplary embodiment has a circular shape.

In FIG. 5, a first conductive pattern 501 contacts a second conductivepattern 502 at an electrical connection portion 503. The firstconductive pattern 501 includes an electrical connection portion 504 tointersect with a conductive element that electrically connects the firstconductive pattern 501 with an FD. The second conductive pattern 502includes an electrical connection portion 505 to intersect with aconductive element that electrically connects the second conductivepattern 502 with a gate of a pixel amplification unit and a source of apixel reset unit. In FIG. 5, a direction axis 506 indicates a firstdirection, and a direction axis 507 indicates a second direction.

The first conductive pattern 501 has a length a1 parallel to the firstdirection and a length a2 parallel to the second direction. The lengtha1 is longer than the length a2. Accordingly, the first conductivepattern 501 extends more in the first direction than in the seconddirection.

The second conductive pattern 502 has a circular shape having a diameterb1.

According to the present exemplary embodiment, the second conductivepattern 502 has a larger area than those in the above exemplaryembodiments, the FD capacitance may be increased, but electricalconnection between the patterns can be further ensured. In the presentexemplary embodiment, the first conductive pattern 501 can bemanufactured using the damascene method, whereas the second conductivepattern 502 can be manufactured using a wiring patterning other than thedamascene method. Such manufacturing process can prevent defects such asdishing in CMP process for formation of the damascene structure, even ifthe area of the second conductive pattern 502 increases.

As described above, the structures of the electrical connection portionsaccording to the exemplary embodiments of the present invention eachenhance the reliability of electrical connection between the first andsecond substrates.

A pixel in a solid-state imaging apparatus to which the electricalconnection structures according to the first to third exemplaryembodiments are applicable can be illustrated as an equivalent circuit.

FIGS. 6A and 6B each illustrate an equivalent circuit of a pixelaccording to the present invention. FIGS. 6A and 6B each illustrate onlyone pixel, but the actual solid-state imaging apparatus includes pixelarrays including a plurality of pixels.

A photoelectric conversion unit 601 generates electron holes andelectrons by photo-electric conversion, and may include a photodiode.

A transfer unit 602 transfers an electrical charge of the photoelectricconversion unit, and may include a metal oxide semiconductor (MOS)transistor (transfer MOS transistor).

An FD 603 receives the electrical charge of the photoelectric conversionunit transferred from the transfer unit when the electric potential isin a floating state.

A pixel reset unit 604 sets at least the electric potential of the FD toa reference electric potential. Alternatively, the pixel reset unit 604sets the electric potential of the photoelectric conversion unit to thereference electric potential by turning on the photoelectric conversionunit and the transfer unit simultaneously. A MOS transistor (reset MOStransistor) may be used as the pixel reset unit 604.

A pixel amplification unit 605 amplifies a signal based on one of acharge pair generated in the photoelectric conversion unit, and outputsthe signal. In the case where a MOS transistor is used as the pixelamplification unit 605, a gate of the MOS transistor (amplification MOStransistor) is electrically connected to the FD.

A transfer control line 606 controls operations of the transfer unit. Areset control line 607 controls operations of the pixel reset unit. Inthe case where the transfer unit and the reset unit are each the MOStransistor, these control lines transfer pulses to gates of the MOStransistors to turn on and off the transistors. These control lines aresupplied with drive pulses from a vertical scanning circuit (notillustrated).

A vertical output line 608 receives amplified signals serially outputfrom the plurality of pixel amplification units 605 in pixel arrays.

A power source 609 supplies a bias current to the amplification units605. In the present circuit configuration, the power source 609 suppliesa bias current for a source follower operation of the amplification MOStransistor.

The amplification MOS transistor and the reset MOS transistor aresupplied with a voltage V1 in FIG. 6A at the drains thereof. Here, thetransistors are supplied with a common voltage in FIG. 6A, but may besupplied with separate voltages. In FIG. 6A, a power source 609A issupplied with a voltage V2.

The reset MOS transistor is supplied with a voltage V3 in FIG. 6B at thedrain thereof. The amplification MOS transistor is supplied with avoltage V4 in FIG. 6B at the drain thereof. In FIG. 6B, a power source609B is supplied with a voltage V5.

As elements constituting the pixels, in FIGS. 6A and 6B, each pixelincludes a portion pixA arranged on a first semiconductor substrate, anda portion pixB arranged on a second semiconductor substrate. Theportions pixA and pixB constitute a pixel pix.

The difference between FIG. 6A and FIG. 6B is described. The referencenumerals for different members are accompanied with different alphabetsA and B. More specifically, the amplification MOS transistor and thereset MOS transistor have different conductivity types. In FIG. 6A,negative channel metal oxide semiconductor (NMOS) transistors are used,and in FIG. 6B, positive channel metal oxide semi-conductor (PMOS)transistors are used. Corresponding to the type difference, differentvoltages are supplied to the transistors and power sources.

In FIG. 6A, a power source voltage V1 is 5 V or 3.3 V for example. Thevoltage V2 is lower than the voltage V1, and may be the groundingpotential. In contrast, in FIG. 6B, the voltages V3 and V4 arerelatively low electric potential such as the grounding potential, andthe voltage V5 is a relatively high voltage of 3.3 V or 1.8 V forexample as compared with the voltage V3.

In FIG. 6B, the amplification MOS transistor is a PMOS transistor. Thephotoelectric conversion unit is configured to use electrons as signalcharges. With a larger amount of incident light, the electric potentialat the gate of the PMOS transistor is decreased. In response to thedecrease in the potential at the gate, the electric potential at thesource of the PMOS transistor is increased as compared with that with asmaller amount of incident light. In other words, a common output linecan be driven with a high driving force when signal amplitude is largeras compared with that at the reset timing.

Accordingly, the structure in FIG. 6B is more advantageous than that inFIG. 6A in terms of reading speed. Conventionally, such structures werearranged on one semi-conductor substrate, and required division of apixel layout into wells, which complicated the structures. The structureusing separate substrates as in the present invention can suppress suchdisadvantages. In addition, the structure in FIG. 6B can narrow a rangeof operation voltage more than that in FIG. 6A, which provides anotheradvantage in terms of lower power source voltage.

This advantage is essentially provided not by the PMOS transistorserving as the amplification MOS transistor, but by the reverse polarityof the MOS transistor relative to the signal charge. More specifically,PMOS transistors are used for the amplification MOS transistor and thereset MOS transistor when the signal charges are electrons, and NMOStransistors are used when the signal charges are holes. As for theconductivity type of the transfer transistor, the transfer MOStransistor is of a first conductivity type, and the amplification MOStransistor and the reset transistor are of a second conductivity typethat is an opposite to the first conductivity type.

The structures of pixels have been described above, however the pixelsmay have other structure. For example, the amplifying transistor may bea junction field-effect transistor (JFET). The photoelectric conversionunit may use holes as signal charges. In this case, the transfertransistor is a PMOS transistor. In addition, a plurality ofphotoelectric conversion units may share the amplifying transistor andthe reset transistor.

Alternatively, a selection transistor may be arranged in series with theamplifying transistor. Assignment of pixels to a plurality ofsemiconductor substrates is not limited to the above-described examples.For example, the reset MOS transistor and the amplification MOStransistor may be arranged on a first semiconductor substrate.Alternatively, no amplification MOS transistor and reset MOS transistorare arranged in pixels, and electrical charges of the photoelectricconversion units may be directly output to a common output line by atransfer MOS transistor.

The first to third exemplary embodiments have been described withexamples of structures applied to connection portions between the FD onthe first substrate and the gate of the amplifying transistor and thesource of the reset transistor on the second substrate. The structures,however, can be applied to the cases with a large number of electricalconnection portions provided between first and second substrates forevery pixel or every pixel array.

FIG. 7 is a cross sectional view illustrating electrical connectionportions between first and second substrates. In this case, the firstsubstrate includes photoelectric conversion units, FDs, and transferunits, and the second substrate includes pixel amplification units andpixel reset units. The electrical connection portions are providedbetween the FDs and gates of the pixel amplification units and sourcesof the pixel reset units. The electrical connection portions, however,may be provided in other ways.

A first substrate 701 includes a pixel area 703 a. A second substrate702 includes a pixel area 703 b. A first peripheral area 704 a isarranged on the first substrate 701. Further, the first peripheral area704 a is arranged outside of the pixel area 703 a. A second peripheralarea 704 b is arranged on the second substrate 702. Further, the secondperipheral area 704 b is arranged outside of the pixel area 703 b, andis provided with a circuit to process signals output from the pixelareas via a common output line or to control signal outputs from thepixel areas.

The first and second substrates are provided with photoelectricconversion units 705, FDs 706, and amplifying transistors 707constituting the pixel amplification unit. The amplifying transistors707 are, at their gates, electrically connected to the FDs respectively.A MOS transistor 708 constitutes a part of a readout circuit that isarranged in the second peripheral area. Examples of the readout circuitinclude a parallel-processing circuit configured to process signals readfor every pixel array in parallel. Examples of the parallel-processingcircuit include a column amplifier and a column AD. MOS transistor 709is a circuit arranged in the second peripheral circuits to providecircuits other than the parallel-processing circuit.

A third conductive pattern 710 constitutes a direct voltage supplywiring that supplies a direct voltage to the MOS transistor 709constituting the parallel-processing circuit. The third conductivepattern 710 extends in the direction perpendicular to the plane of theFIG. 7, and supplies a common direct voltage to the MOS transistor 709in every parallel processing circuit. The third conductive pattern isarranged outside of the pixel area.

Fourth conductive pattern 711 is provided outside of the pixel area onthe first substrate.

An electrical connection portion 712 electrically connects the thirdconductive pattern 710 to the fourth conductive pattern 711. Forexample, the electrical connection portion 712 electrically connects aconductive pattern formed on a top wiring layer on the first substrateto another conductive pattern formed on of a top wiring layer on thesecond substrate. The structures described in the first to thirdexemplary embodiments can be applied to the electrical connectionportion 712.

The fourth conductive pattern 711 is arranged in the first peripheralarea on the first substrate. The first peripheral area is provided witha smaller number of or no circuit elements as compared to those in thesecond peripheral area on the second substrate. The arrangementrelatively increases the flexibility of layout in the first peripheralarea. Hence, the fourth conductive pattern 711 is set to have a largerarea than those of the second conductive pattern, so that a resistancevalue can be decreased while the flexibility of layout in the secondperipheral area can be maintained.

An electrical connection portion 713, i.e. second electrical connectionportion, electrically connects the FD 706 to the gate of the amplifyingtransistor 707. The second electrical connection portion can be formedby electrically connecting a conductive pattern formed on a top wiringlayer on the first substrate to a conductive pattern formed on a topwiring layer on the second substrate. The second electrical connectionportion corresponds to the electrical connection portions described inthe first to third exemplary embodiments.

Regarding a relationship between the area of the conductive pattern forthe electrical connection portion 712 and the area of the conductivepattern for the electrical connection portion 713, the area of theconductive pattern for the electrical connection portion 713 may be setsmaller. Since the electrical connection portion 713 connects the FD 706to the gate of the amplifying transistor 707, if the conductive patternhas a larger area, the FD will have a larger parasitic capacitance.

The first substrate is further provided with control wiring (notillustrated) to control the transfer unit. The second substrate isprovided with a vertical scan unit (not illustrated) configured tosupply drive pulses to the control wiring to control conduction of thetransfer unit. Accordingly, the control wiring is electrically connectedto the vertical scan unit by a structure similar to the electricalconnection portion 713.

The present invention has been described using exemplary embodiments,however, any combination and modification of the exemplary embodimentscan be made without departing from the scope of the present invention.

For example, in the structures of the first and second exemplaryembodiments, the shapes of the first and second conductive patterns canbe replaced with each other. Further, in the first and second exemplaryembodiments, at least one of the first and second conductive patternshas a partial pattern extending in a predetermined direction and havinga length parallel to the predetermined direction longer than a length ina direction other than the predetermined direction. The other conductivepattern may have any shape. The magnitude relationship described in thefirst exemplary embodiment between the length in the direction that theconductive pattern extends and a pixel pitch is applicable to the otherexemplary embodiments.

In the above exemplary embodiments, the present invention is applied toelectrical connection portions between the FD and the pixelamplification unit and pixel reset unit. The present invention, however,can be applied to only the elements other than FDs, pixel amplificationunits, and pixel reset units. More specifically, in the case wheretransfer units are arranged on the first substrate, and vertical scanunits for scanning the transfer units are arranged on the secondsubstrate, the present invention can be applied to electrical connectionportions between the vertical scan units and the transfer units.Further, if vertical output lines are also arranged on the firstsubstrate and column amplification units or column readout circuits suchas column ADs are arranged on the second substrate, the presentinvention can be applied to electrical connection portions between thevertical output lines and the column readout circuits.

Alternatively, the first or second conductive pattern may be arranged toextend to a part of a region that corresponds to a vertical projectionof the photoelectric conversion units in the direction to the secondsubstrate. Such structure enables light transmitted through thephotoelectric conversion unit to return to the photoelectric conversionunits, so that light sensitivity can be improved.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all modifications, equivalent structures, and functions.

This application claims priority from Japanese Patent Application No.2010-149478 filed Jun. 30, 2010, which is hereby incorporated byreference herein in its entirety.

REFERENCE SIGNS LIST

-   -   102 photoelectric conversion unit    -   702 first substrate    -   701 second substrate    -   105 first conductive pattern    -   106 second conductive pattern    -   201 electrical connection portion

The invention claimed is:
 1. A solid-state imaging apparatus including afirst substrate on which a plurality of photoelectric conversion unitsare arranged and a second substrate on which a plurality of readoutcircuits to process or read a signal generated by each of thephotoelectric conversion units are arranged, the solid-state imagingapparatus comprising: a plurality of first conductive patterns which arearranged on the first substrate and electrically separated from oneanother; and a plurality of second conductive patterns which arearranged on the second substrate and electrically separated from oneanother, wherein each of the plurality of first conductive patterns hasa first electrical connection portion to be in contact with at least oneof the second conductive pattern, and each of the plurality of secondconductive patterns has a second electrical connection portion to be incontact with at least one of the first conductive patterns, wherein thefirst conductive pattern includes a first partial pattern that includesthe first electrical connection portion and extends in a firstdirection, and the second conductive pattern includes a second partialpattern that includes the second electrical connection portion andextends in a second direction different from the first direction, andwherein the first partial pattern has a length extending in the firstdirection longer than a length thereof in the second direction.
 2. Thesolid-state imaging apparatus according to claim 1, wherein the firstdirection perpendicularly intersects the second direction.
 3. Thesolid-state imaging apparatus according to claim 1, further comprising:a plurality of pixels, each pixel including the photoelectric conversionunit, a floating diffusion, a transfer unit configured to transfer asignal from the photoelectric conversion unit to the floating diffusion,a pixel amplification unit electrically connected to the floatingdiffusion at a gate thereof, and a pixel reset unit configured to resetan electric potential at an input node of the pixel amplification unit,wherein a plurality of the photoelectric conversion units, a pluralityof the floating diffusions, and a plurality of the transfer units arearranged on the first substrate, and a plurality of the pixelamplification units and a plurality of the pixel reset units arearranged on the second substrate, and wherein the plurality of firstconductive patterns is electrically connected to the plurality offloating diffusions respectively, and the plurality of second conductivepatterns is electrically connected to the plurality of gates of thepixel amplification units respectively.
 4. The solid-state imagingapparatus according to claim 3, wherein at least part of the pluralityof first conductive patterns and the plurality of second conductivepatterns is arranged to extend to a part of a region in which thephotoelectric conversion unit is vertically projected in a direction tothe second substrate.
 5. The solid-state imaging apparatus according toclaim 3, wherein the plurality of the floating diffusions, the pluralityof the transfer units configured to transfer a signal from each of thephotoelectric conversion units to the floating diffusions, and aplurality of transfer control lines configured to control conduction ofthe transfer units are arranged on the first substrate, and a verticalscan unit configured to supply drive pulses to the plurality of transfercontrol lines is arranged on the second substrate, wherein the pluralityof first conductive patterns is electrically connected to the pluralityof transfer control line respectively, and wherein each of the pluralityof second conductive patterns is electrically connected to the verticalscan unit.
 6. The solid-state imaging apparatus according to claim 1,wherein the first conductive patterns each have a plurality of the firstelectrical connection portions, and wherein the second conductivepattern each have a plurality of the second electrical connectionportions.
 7. The solid-state imaging apparatus according to claim 1,wherein at least the plurality of first conductive patterns or theplurality of second conductive patterns are formed by a plurality ofwiring layers.
 8. The solid-state imaging apparatus according to claim1, wherein each of the first conductive patterns further includes athird partial pattern extending in the second direction, wherein each ofthe second conductive patterns further includes a fourth partial patternextending in the first direction, wherein the third partial patternincludes a third electrical connection portion to be in contact with thefourth partial pattern, and wherein the fourth partial pattern furtherincludes a fourth electrical connection portion to be in contact withthe third partial pattern.
 9. The solid-state imaging apparatusaccording to claim 1, wherein at least the plurality of first conductivepatterns or the plurality of second conductive patterns has a damascenestructure.
 10. The solid-state imaging apparatus according to claim 1,further comprising: a plurality of pixels, each pixel including thephotoelectric conversion unit, a floating diffusion, and a transfer unitconfigured to transfer a signal from the photoelectric conversion unitto the floating diffusion, wherein a plurality of sets of thephotoelectric conversion unit, the floating diffusion, and the transferunit are arranged on the first substrate at a predetermined pixel pitch,and wherein the first partial pattern has a length parallel to the firstdirection shorter than the pixel pitch.
 11. The solid-state imagingapparatus according to claim 1, further comprising: a plurality ofpixels, each pixel including the photoelectric conversion unit, afloating diffusion, a transfer unit configured to transfer a signal fromthe photoelectric conversion unit to the floating diffusion, a pixelamplification unit electrically connected to the floating diffusion at agate thereof, and a pixel reset unit configured to reset an electricpotential at an input node of the pixel amplification unit, wherein theplurality of photoelectric conversion units, the plurality of floatingdiffusions, and the plurality of transfer units are arranged on thefirst substrate, wherein the plurality of pixel amplification units andthe plurality of pixel reset units are arranged on the second substrate,wherein the pixel amplification unit and the pixel reset unit are sharedby the plurality of the photoelectric conversion units, wherein theplurality of photoelectric conversion units is arranged at apredetermined pixel pitch, and wherein a condition of L is larger thanor equal to ((n−1)*p) and is smaller than or equal to (n*p) is satisfiedwhere L is a length of the first partial pattern in the first direction,n is the number of the photoelectric conversion units to be shared, andp is the pixel pitch.
 12. A solid-state imaging apparatus including afirst substrate on which a plurality of photoelectric conversion unitsare arranged and a second substrate on which a plurality of readoutcircuits to process or read a signal generated by each of thephotoelectric conversion units are arranged, the solid-state imagingapparatus comprising: a plurality of first conductive patterns which arearranged on the first substrate and electrically separated from oneanother; and a plurality of second conductive patterns which arearranged on the second substrate and electrically separated from oneanother, wherein each of the plurality of first conductive patterns hasa first electrical connection portion to be in contact with at least oneof the second conductive patterns, and wherein each of the plurality offirst conductive patterns has a first electrical connection portion tobe in contact with at least one of the second conductive patterns, andwherein the first conductive pattern includes a first partial patternthat includes the first electrical connection portion and extends in afirst direction, and the second conductive pattern includes a secondpartial pattern that includes the second electrical connection portionand extends in a second direction different from the first direction,and wherein the second partial pattern has a length extending in thesecond direction longer than a length thereof in the first direction.13. The solid-state imaging apparatus according to claim 12, furthercomprising: a plurality of pixels, each pixel including thephotoelectric conversion unit, a floating diffusion, and a transfer unitconfigured to transfer a signal from the photoelectric conversion unitto the floating diffusion, wherein a plurality of sets of thephotoelectric conversion unit, the floating diffusion, and the transferunit are arranged on the first substrate at a predetermined pixel pitch,and wherein the second partial pattern has a length parallel to thesecond direction shorter than the pixel pitch.
 14. The solid-stateimaging apparatus according to claim 12, wherein the first directionperpendicularly intersects the second direction.
 15. The solid-stateimaging apparatus according to claim 12, further comprising: a pluralityof pixels, each pixel including the photoelectric conversion unit, afloating diffusion, a transfer unit configured to transfer a signal fromthe photoelectric conversion unit to the floating diffusion, a pixelamplification unit electrically connected to the floating diffusion at agate thereof, and a pixel reset unit configured to reset an electricpotential at an input node of the pixel amplification unit, wherein aplurality of the photoelectric conversion units, a plurality of thefloating diffusions, and a plurality of the transfer units are arrangedon the first substrate, and a plurality of the pixel amplification unitsand a plurality of the pixel reset units are arranged on the secondsubstrate, and wherein the plurality of first conductive patterns iselectrically connected to the plurality of floating diffusionsrespectively, and the plurality of second conductive patterns iselectrically connected to the plurality of gates of the pixelamplification units respectively.
 16. The solid-state imaging apparatusaccording to claim 15, wherein at least part of the plurality of firstconductive patterns and the plurality of second conductive patterns isarranged to extend to a part of a region in which the photoelectricconversion unit is vertically projected in a direction to the secondsubstrate.
 17. The solid-state imaging apparatus according to claim 15,wherein the plurality of the floating diffusions, the plurality of thetransfer units configured to transfer a signal from each of thephotoelectric conversion units to the floating diffusions, and aplurality of transfer control lines configured to control conduction ofthe transfer units are arranged on the first substrate, and a verticalscan unit configured to supply drive pulses to the plurality of transfercontrol lines is arranged on the second substrate, wherein the pluralityof first conductive patterns is electrically connected to the pluralityof transfer control line respectively, and wherein each of the pluralityof second conductive patterns is electrically connected to the verticalscan unit.
 18. The solid-state imaging apparatus according to claim 12,wherein the first conductive patterns each have a plurality of the firstelectrical connection portions, and wherein the second conductivepattern each have a plurality of the second electrical connectionportions.
 19. The solid-state imaging apparatus according to claim 12,wherein at least the plurality of first conductive patterns or theplurality of second conductive patterns are formed by a plurality ofwiring layers.
 20. The solid-state imaging apparatus according to claim12, wherein each of the first conductive patterns further includes athird partial pattern extending in the second direction, wherein each ofthe second conductive patterns further includes a fourth partial patternextending in the first direction, wherein the third partial patternincludes a third electrical connection portion to be in contact with thefourth partial pattern, and wherein the fourth partial pattern furtherincludes a fourth electrical connection portion to be in contact withthe third partial pattern.
 21. The solid-state imaging apparatusaccording to claim 12, wherein at least the plurality of firstconductive patterns or the plurality of second conductive patterns has adamascene structure.